供应MJ15004G 双极晶体管20A 140V 250W PNP

型号：MJ15004 MJ15004G MJ15004G MJ15004G MJ15004G
描述：Silicon NPN Power Transistors 制造商：ON Semiconductor
产品种类：Transistors Bipolar (BJT)
晶体管极性：NPN
集电极—发射极最大电压 VCEO：140 V
发射极 - 基极电压 VEBO：5 V
最大直流电集电极电流：20 A
直流集电极/Base Gain hfe Min：25
配置：Single
最大工作频率：2 MHz
最大工作温度：+ 150 C
安装风格：Through Hole
封装 / 箱体：TO-204-2 (TO-3)
封装：Tray
集电极连续电流：20 A
最小工作温度：- 65 C
功率耗散：250 W
工厂包装数量：100
描述：MJ15003和MJ15004是PowerBaset功率晶体管专为高功率音频，磁头定位器和其它线性应用程序。

The MJ15003 and MJ15004 are power transistors designed for high

power audio, disk head positioners and other linear applications.

Features

• High Safe Operating Area

• For Low Distortion Complementary Designs

• High DC Current Gain

• These Devices are Pb−Free and are RoHS Compliant*

                                           MJ15003 (NPN), MJ15004 (PNP)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

Collector−Emitter Voltage VCEO 140 Vdc

Collector−Base Voltage VCBO 140 Vdc

Emitter−Base Voltage VEBO 5 Vdc

Collector Current − Continuous IC 20 Adc

Base Current − Continuous IB 5 Adc

Emitter Current − Continuous IE 25 Adc

Total Power Dissipation @ TC = 25°C

Derate above 25°C

PD 250

1.43

W

W/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg –65 to +200 °C