NJW21193G NJW21194G功率晶体管200W PNP

型号：NJW21193G
厂家：ON
标准包装：30
类别：分离式半导体产品
家庭：晶体管(BJT) - 单路
系列：-
晶体管类型：PNP
电流 - 集电极 (Ic)（最大）：16A
电压 - 集电极发射极击穿（最大）：250V
Ib、Ic条件下的Vce饱和度（最大）：4V @ 3.2A，16A
电流 - 集电极截止（最大）：100μA
在某 Ic、Vce 时的最小直流电流增益 (hFE)：20 @ 8A，5V
功率 - 最大：200W
频率 - 转换：4MHz
安装类型：通孔
封装/外壳：TO-3P-3，SC-65-3
供应商设备封装：TO-3P
包装：管件
其它名称：NJW21193G-NDNJW21193GOS

The NJW21193G and NJW21194G utilize Perforated Emitter

technology and are specifically designed for high power audio output,

disk head positioners and linear applications.

Features

• Total Harmonic Distortion Characterized

• High DC Current Gain

• Excellent Gain Linearity

• High SOA

• These Devices are Pb−Free and are RoHS Compliant

NJW21193G (PNP) NJW21194G (NPN)

NJW21193G (PNP) NJW21194G (NPN)

The data of Figure 13 is based on TJ(pk) = 150°C; TC is

variable depending on conditions. At high case

temperatures, thermal limitations will reduce the power than

can be handled to values less than the limitations imposed by

second breakdown.

There are two limitations on the power handling ability of

a transistor; average junction temperature and secondary

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.