CT Micro 线性光耦 CT785GB(S)(T1)

CT785GB(S)(T1)

CT785GB(S)(T1)

CT785GB(S)(T1)

CT785GB(S)(T1)

Features

 High isolation 5300 VRMS

 DC input with transistor output

 Operating temperature range - 55 °C to 125 °C

 RoHS compliance

 REACH compliance

 Halogen free

 Regulatory Approvals

 UL - UL1577 (Pending Approval)

 VDE - EN60747-5-5 (Pending Approval)

 CQC – GB4943.1, GB8898 (Pending Approval)

 IEC60065, IEC60950 (Pending Approval)

Description

The CT785 series consists of a photo transistor

optically coupled to a gallium arsenide

Infrared-emitting diode in a DIP package.

Applications

 Switch mode power supplies

 Computer peripheral interface

 Microprocessor system interface

CT785GB(S)(T1)

Wave soldering (JEDEC22A111 compliant)

One time soldering is recommended within the condition of temperature.

Temperature: 260+0/-5˚C.

Time: 10 sec.

Preheat temperature:25 to 140˚C.

Preheat time: 30 to 80 sec.

Profile Feature Pb-Free Assembly Profile

Temperature Min. (Tsmin) 150°C

Temperature Max. (Tsmax) 200°C

Time (ts) from (Tsmin to Tsmax) 60-120 seconds

Ramp-up Rate (tL to tP) 3°C/second max.

Liquidous Temperature (TL) 217°C

Time (tL) Maintained Above (TL) 60 – 150 seconds

Peak Body Package Temperature 260°C +0°C / -5°C

Time (tP) within 5°C of 260°C 30 seconds

Ramp-down Rate (TP to TL) 6°C/second max

Time 25°C to Peak Temperature 8 minutes max