供应东沅场效应管 FKBA8066 N沟道MOSFET

Fet/东沅 FKBA8066 PRPAK5x6 N沟道80V快速开关MOSFET

FKBA8066 Features

● Advanced Trench MOS Technology
● 100% EAS Guaranteed
● Fast Switching Speed
● Green Device Available

FKBA8066 Applications
● High Frequency Switching and Synchronous Rectification
● DC/DC Converter
● Motor Drivers

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
● Drain- Source Breakdown Voltage: 80V
● Static Drain-Source On-Resistance
VGS=10V , ID=10A: 7.2~8.7mΩ
VGS=4.5V , ID=10A: 10.5~13mΩ
● Gate Threshold Voltage: 1.2~2.3V
● Drain-Source Leakage Current
VDS=64V , VGS=0V , TJ=25℃: 1uA
VDS=64V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Gate Resistance: 1.5Ω
● Total Gate Charge: 29nC
● Gate Source Charge: 7.7nC
● Gate-Drain Charge: 5.3nC
● Turn-On Delay Time: 6.2ns
● Rise Time: 19s
● Turn-Off Delay Time: 9.4ns
● Fall Time: 36ns
● Input Capacitance: 1738pF
● Output Capacitance: 317pF
● Reverse Transfer Capacitance: 12pF

产品规格书（部分）