供应蓝箭 BRD50P06 P沟道MOS场效应管

BlueRocket/蓝箭电子 BRD50P06 TO-252塑封封装P沟道MOS场效应管

Descriptions

BRD50P06 P-CHANNEL MOSFET in a TO-252 Plastic Package.

Features

Low RDS(on), low gate charge, low Crss, fast switching. HF Product.

Applications

Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products.

Electrical Characteristics(Ta=25℃)
● Drain–Source Breakdown Voltage: -60~-68V
● Zero Gate Voltage Drain Current
VDS=-60V VGS=0V: -1.0μA
VDS=-48V TC=150℃: -10μA
● Gate-Body Leakage CurrentForward: ±0.1μA
● Gate Threshold Voltage: -1V -1.6V -3V
● Static Drain–Source On–Resistance
VGS=-10V ID=-20A: 30~35mΩ
VGS=-4.5V ID=-10A: 40~45mΩ
● Drain-Source Diode Forward Voltage: -1.3V
● Gate resistance: 10Ω
● Input Capacitance: 3200pF
● Output Capacitance: 800pF
● Reverse Transfer Capacitance: 270pF
● Total Gate Charge Qg(10V): 45nC
● Total Gate Charge Qg(4.5V): 23nC
● Gate-to-Source Charge: 9.3nC
● Gate-to-Drain Charge: 10.2nC
● Turn–On Delay Time: 12ns
● Turn–On Rise Time: 14.5ns
● Turn–Off Delay Time: 38ns
● Turn–Off Fall Time: 15ns

BRD50P06产品规格书（部分）