供应FKBA4400 东沅40V双N场效应管

Fet/东沅 FKBA4400 PRPAK5x6 N沟道40V快速开关MOSFET

Description

The FKBA4400 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buckconverter applications.The FKBA4400 meet the RoHS and GreenProduct requirement 100% EAS guaranteed withfull function reliability approved.

Features

● 100% EAS Guaranteed

● Green Device Available

● Super Low Gate Charge

● Excellent CdV/dt effect decline

● Advanced high cell density Trench technology

Absolute Maximum Ratings
● Drain- Source Vltage: 40V
● Gate-Source Voltage: ±20V
● Continuous Drain Current
ID@TC=25℃: 39, 54A
ID@TC=100℃: 25, 34A
ID@TA=25℃: 8.7, 11.8A
ID@TA=70℃: 6.9, 9.5A
● Pulsed Drain Current: 78, 108A
● Single Pulse Avalanche Energy: 31.3, 76.1mJ
● Avalanche Current: 25, 39A
● Total Power Dissipation
PD@TC=25℃: 41W
PD@TA=25℃: 2W 
● Storage Temperature Range: -55 to 150℃
● Operating Junction Temperature Range: -55 to 150℃

产品规格书（部分）