供应蓝箭 BRCS4828SC N沟道双芯片场效应管

BlueRocket/蓝箭电子 BRCS4828SC SOP-8 塑封封装N沟道双芯片场效应管

Descriptions

BRCS4828SC N-Channel Enhancement Double Mode Field Effect Transistor in a SOP-8 Plastic Package.

Absolute Maximum Ratings(Ta=25℃)
● Drain-Source Voltage: 80V
● Drain Current (Tc=25℃): 80A
● Drain Current (Tc=100℃): 72A
● Single Avalanche Current: 320A
● Gate-Source Voltage: ±20V
● Single Pulsed Avalanche Energy: 1164mJ
● Repetitive Avalanche Energy: 13.1mJ
● Single Avalanche Current: 75A
● Power Dissipation (Tc=25℃): 160W
● Storage Temperature Range: -55 to 150℃
DYNAMIC PARAMETERS
● Input Capacitance: 665pF
● Output Capacitance: 76pF
● Reverse Transfer Capacitance: 20pF
● Gate resistance: 2.2Ω
SWITCHING PARAMETERS
● Total Gate Charge (10V): 8.5~10.5nC
● Total Gate Charge (4.5V): 4.3~5.5nC
● Gate-Source Charge: 1.6nC
● Gate-Drain Charge: 2.2nC
● Turn-on Delay Time: 4.7ns
● Turn-on Rise Time: 2.3ns
● Turn-off Delay Time: 15.7ns
● Turn-off Fall Time: 1.9ns
● Body Diode Reverse Recovery Time: 35ns

● Body Diode Reverse Recovery Charge: 32nC

BRCS4828SC产品规格书（部分）