供应东沅 FKBA3204 N沟道场效应管MOSFET

Fet/东沅 FKBA3204 PRPAK5x6 双N沟道增强型MOSFET

Description

The FKBA3204 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most applications.The FKBA3204 meet the RoHS and GreenProduct requirement, 100% EAS guaranteed withfull function reliability approved.

Features

● 100% EAS Guaranteed

● Green Device Available

● Super Low Gate Charge

● Excellent CdV/dt effect decline

● Advanced high cell density Trench technology

产品规格书（部分）