供应东沅 FKBA0208 双N沟道MOSFET

Fet/东沅 FKBA0208 PRPAK5x6 双N通道100V快速开关MOSFET

FKBA0208 Absolute Maximum Ratings

● Drain- Source Vltage: 100V
● Gate-Source Voltage: ±20V
● Continuous Drain Current
ID@TC=25℃: 5.0A
ID@TC=100℃: 3.1A
ID@TA=25℃: 1.5A
ID@TA=70℃: 1.2A
● Pulsed Drain Current: 11A
● Total Power Dissipation:
PD@TC=25℃: 17.8W
PD@TA=25℃: 1.5W
● Storage Temperature Range: -55 to 150℃
● Operating Junction Temperature Range: -55 to 150℃

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
● Drain- Source Breakdown Voltage: 100V
● Static Drain-Source On-Resistance
VGS=10V , ID=3A: 290~330mΩ

VGS=4.5V , ID=3A: 300~360mΩ
● Gate Threshold Voltage: 1.0~3.0V
● Drain-Source Leakage Current

VDS=80V , VGS=0V , TJ=25℃: 1uA

VDS=80V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 5.5S

● Gate Resistance: 2.8Ω
● Total Gate Charge: 9.6nC
● Gate Source Charge: 1.83nC
● Gate-Drain Charge: 1.85nC
● Turn-On Delay Time: 1.4ns
● Rise Time: 30.6ns
● Turn-Off Delay Time: 11.2ns
● Fall Time: 6ns
● Input Capacitance: 508pF
● Output Capacitance: 29pF
● Reverse Transfer Capacitance: 16.4pF

FKBA0208产品规格书（部分）