供应BRCS4800SC 蓝箭N沟道MOS场效应管

BlueRocket/蓝箭电子 BRCS4800SC SOP-8塑封封装N沟道MOS场效应管

Descriptions

BRCS4800SC N-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package.

Features

VDS(V)=30V ID=6.9A

RDS(ON) <32mΩ(VGS=10V)

RDS(ON) <36mΩ(VGS=4.5V)

RDS(ON) <52mΩ(VGS=2.5V)

Applications

Power Management in Notebook computer, Portable Equipment and Battery powered systems and this device is suitable for use as a load switch or in PWM applications.

Electrical Characteristics(Ta=25℃)
● Drain–Source Breakdown Voltage: 30V
● Zero Gate Voltage Drain Current
VDS=-24V VGS=0V: 1.0μA
VDS=-24V VGS=0V TJ=55℃: 5.0μA
● Gate–Body Leakage: ±100nA
● Gate Threshold Voltage: 0.7V 1.1V 1.4V
● On state drain current: 6.9A
● Static Drain–Source On–Resistance
VGS=10V ID=6.9A: 24~32mΩ
VGS=10V ID=6.9A TJ=125°C: 32.3~38mΩ
VGS=4.5V ID=6.0A: 27~36mΩ
VGS=2.5V ID=5.0A: 40~52mΩ
● Forward Transconductance: 24S
● Diode Forward Voltage: 0.77~1.0V
● Maximum Body-Diode Continuous Current: 3.0A
● Total Gate Charge: 9.6nC
● Gate Source Charge: 1.65nC
● Gate Drain Charge: 3.0nC
● Gate resistance: 1.24Ω
● Input Capacitance: 858pF
● Output Capacitance: 110pF
● Reverse Transfer Capacitance: 80pF
● Turn–On Delay Time: 5.7ns
● Turn–On Rise Time: 13ns
● Turn–Off Delay Time: 37ns
● Turn–Off Fall Time: 4.2ns
● Body Diode Reverse Recovery Time: 15.5ns
● Body Diode Reverse Recovery Charge: 7.9nC

BRCS4800SC规格书（部分）