供应FKD6113 东沅60V P沟道MOSFET

Fet/东沅 FKD6113 TO252 60V P沟道快速开关MOSFET

Description

The FKD6113 is the high cell density trenchedP-ch MOSFETs, which provide excellent RDSONand gate charge for most of the synchronous buckconverter applications.The FKD6113 meet the RoHS and Green Productrequirement, 100% EAS guaranteed with fullfunction reliability approved.

Absolute Maximum Ratings

● Drain- Source Voltage: -60V

● Gate-Source Voltage: ±20V

● Continuous Drain Current

ID@TA=25℃：-13A

ID@TA=70℃：-8.3A

ID@TA=25℃：-3.3A

ID@TA=70℃：-2.7A

● Pulsed Drain Current: -26A

● Single Pulse Avalanche Energy: 29.8mJ

● Avalanche Current: 24.4A

● Total Power Dissipation

PD@TC=25℃：31.3W

PD@TA=25℃ ：2W

● Storage Temperature Range: -55 to 150℃

● Operating Junction Temperature Range: -55 to 150℃

Thermal Data

● Thermal Resistance Junction-ambient : 62℃/W

● Thermal Resistance Junction-Case: 4℃/W

FKD6113产品规格书（部分）