供应BRCS015N04SZC 蓝箭电子N沟道场效应管

BlueRocket/蓝箭电子 BRCS015N04SZC PDFN5×6封装N沟道场效应管

Descriptions

BRCS015N04SZC N-Channel MOSFET in a PDFN5×6 Plastic Package.

Features

● Low RDS(ON) to minimize conductive loss

● low Gate Charge for fast switching

● Low Thermal resistance

● HF Product

Applications

Battery Management

Absolute Maximum Ratings(Ta=25℃)
● Drain-Source Voltage: 40V
● Drain Current - Continuous: 170A
● Drain Current - Pulsed: 340A
● Gate-Source Voltage: ±20V
● Power Dissipation: 65W
● Single Pulse Avalanche Energy(L=0.5mH): 358mJ
● Avalanche Current(L=0.5mH): 32A
● Junction and Storage Temperature Range: -55 to 150℃
● Thermal resistance, junction - case: 1.9℃/W
● Thermal resistance, junction - ambient: 55℃/W

BRCS015N04SZC产品规格书