供应FKBB3103 东沅P沟道30V快速开关MOSFET

FKBB3103 Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
● Drain- Source Breakdown Voltage: -30V
● Temperature Coefficient Reference: -0.022V/℃
● Static Drain-Source On-Resistance
VGS=-10V , ID=-15A: 20mΩ
VGS=-4.5V , ID=-10A: 32mΩ
● Gate Threshold Voltage: -1.0~-2.5V
● Temperature Coefficient: 4.6mV/℃
● Drain-Source Leakage Current
VDS=-24V , VGS=0V , TJ=25℃: -1uA
VDS=-24V , VGS=0V , TJ=55℃: -5uA
● Gate- Source Leakage Current: ±100nA
● Forward Transconductance: 19S
● Gate Resistance: 13Ω
● Total Gate Charge: 12.5nC
● Gate Source Charge: 5.4nC
● Gate-Drain Charge: 5nC
● Turn-On Delay Time: 4.4ns
● Rise Time: 11.2ns
● Turn-Off Delay Time: 34ns
● Fall Time: 18ns
● Input Capacitance: 1345pF
● Output Capacitance: 194pF
● Reverse Transfer Capacitance: 158pF

Diode Characteristics
● Continuous Source Current: -32A
● Pulsed Source Current: 65A
● Diode Forward Voltage: -1.2V
● Reverse Recovery Time: 12.4nS
● Reverse Recovery Charge: 5nC

FKBB3103产品规格书（部分）