供应 BR4953 蓝箭P沟道MOS管 SOP-8封装

BlueRocket/蓝箭电子 BR4953 SOP-8塑封封装P沟道MOS场效应管

Electrical Characteristics(Ta=25℃)

● Drain–Source Breakdown Voltage: -30V
● Zero Gate Voltage Drain Current
VDS=-24V VGS=0V: -1μA
VDS=-24V VGS=0V TJ=85°C: -30μA
● Gate Threshold Voltage: -1.0V -1.45V -2.0V
● Drain-Source On-state Resistance
VGS=-10V IDS=-4.9A: 53~60mΩ
VGS=-4.5V IDS=-3.6A: 80~95
● Diode Forward Voltage: -0.7~-1.3V
● Total Gate Charge: 22.6~30nC
● Gate-Source Charge: 4.7nC
● Gate-Drain Charge: 2.0nC
● Gate Resistance: 11Ω
● Input Capacitance: 1260pF
● Output Capacitance: 400pF
● Reverse Transfer Capacitance: 220pF
● Turn–On Delay Time: 10~18ns
● Turn–On Rise Time: 15~20ns
● Turn–Off Delay Time: 22~38ns
● Turn–Off Fall Time: 15~25ns

Applications

Power Management in Notebook computer, Portable Equipment and Battery powered systems.

 BR4953产品规格书