大功率无线射频功放管RD70HVF1-101

 DESCRIPTION
 RD70HVF1-101 is a MOS FET type transistor
specifically designed for VHF/UHF/870MHz
RF power amplifiers applications.
FEATURES
High power gain and High Efficiency.
Typical Po Gp ηD
(175MHz) 70W 13.8dB 65%
(527MHz) 68W 13.0dB 63%
(870MHz) 65W 11.5dB 58%
Integrated gate protection diode.
APPLICATION
For output stage of high power amplifiers in
VHF/UHF/800MHz-band mobile radio sets.