射频大功率MOSFET,RQA0002DNSTB-E

DESCRIPTION
RQA0002DNSTB-E is a MOS FET type transistor
specifically designed for VHF/UHF/870MHz
RF power amplifiers applications.
FEATURES
High power gain and High Efficiency.
Typical        Po      Gp          ηD
(175MHz)  5W     13.8dB    65%
(527MHz)  4.5W   13.0dB   63%
(870MHz)  4W      11.5dB   58%
Integrated gate protection diode.
APPLICATION
For output stage of high power amplifiers in
VHF/UHF/800MHz-band mobile radio sets.
RoHS COMPLIANT
 RQA0002DNSTB-E is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot
Marking. This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 16 V
VGSS Gate to source voltage Vds=0V -2.5/ 5 V
Pch Channel dissipation Tc=25°C 25 W
Pin Input Power Zg=Zl=50? 0.8* W
ID Drain Current - 2 A
Tch Junction Temperature - 150 °C
Tstg Storage temperature - -40 to 125 °C
Rth j-c Thermal resistance Junction to case 2.5 °C/W
Note: Above parameters are guaranteed independently.
*: 175MHz spec. is 0.6W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
LIMITS UNISYMBOL PARAMETER CONDITIONS T
MIN TYP MAX.
IDSS Drain cutoff current VDS=10V, VGS=0V - - 10 uA
IGSS Gate cutoff current VGS=2.5V, VDS=0V - - 1 uA
VTH Gate threshold Voltage VDS=3.6V, IDS=1mA 0.5 1 1.5 V
Pout1 Output power - 4* - W
?D1 Drain efficiency
f=175MHz,VDD=7.2V
Pin=0.3W,Idq=250mA - 65* - %
Pout2 Output power 3.5** 4** - W
?D2 Drain efficiency
f=527MHz ,VDD=7.2V
Pin=0.4W,Idq=250mA 58** 63** - %
Pout3 Output power - 4*** - W
?D3 Drain efficiency
f=870MHz ,VDD=7.2V
Pin=0.5W,Idq=250mA - 58*** - %
VSWRT Load VSWR tolerance
VDD=5V,Po=4W(Pin Control)
f=527MHz,Idq=250mA,Zg=50?
Load VSWR=20:1(All Phase)