场效应管 SSM6J206FE,KR

SSM6J206FE,TOSHIBA,SOT-563,SMD/MOS,P场,-20V,-2A,0.13Ω，带二

极静电保护

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type

应用:

 * 高速开关应用
 * 电源管理开关应用

特点：
 * 1.8V驱动器
 * 低导通电阻：Ron = 460 mΩ (max) (@VGS = -1.8 V)
             ：Ron = 306 mΩ (max) (@VGS = -2.5 V)
             ：Ron = 234 mΩ (max) (@VGS = -4.0 V)

产品型号:SSM6J206FE

封装:SOT-563

品牌：TOSHIBA/东芝

源漏极间雪崩电压V(br)dss(V):-20

夹断电压VGS(V):±8

最大漏极电流Id(A):-2

源漏极最大导通电阻rDS(on)(Ω):0.13 @VGS = -4 V

开启电压VGS(TH)(V):-1

功率PD(W):0.5

输入电容Ciss(PF):335 typ.

通道极性:P沟道

低频跨导gFS(ms)：4

单脉冲雪崩能量EAS(mJ):

导通延迟时间Td(on)(ns):20 typ.

关断延迟时间Td(off)(ns):20 typ.

温度(℃): -55 ~150

描述:SSM6J205FE,-20V,-2A P-沟道增强型场效应晶体管

SSM6J206FE,TOSHIBA,SOT-563,SMD/MOS,P场,-20V,-2A,0.13Ω
SSM6J207FE,TOSHIBA,SOT-563,SMD/MOS,P场,-30V,-1.4A,0.251Ω
SSM6J212FE,TOSHIBA,SOT-563,SMD/MOS,P场,-20V,-4A,0.0407Ω
SSM6J213FE,TOSHIBA,SOT-563,SMD/MOS,P场,-20V,-2.6A,0.103Ω
SSM6J23FE,TOSHIBA,SOT-563,SMD/MOS,P场,-12V,-1.2A,0.16Ω
SSM6J25FE,TOSHIBA,SOT-563,SMD/MOS,P场,-20V,-0.5A,0.26Ω
SSM6J53FE,TOSHIBA,SOT-563,SMD/MOS,P场,-20V,-1.8A,0.138Ω
SSM3J15FV,TOSHIBA,SOT-723,SMD/MOS,P场,-30V,-0.1A,12Ω
SSM3J16FV,TOSHIBA,SOT-723,SMD/MOS,P场,-20V,-0.1A,8Ω
SSM3J56MFV,TOSHIBA,SOT-723,SMD/MOS,P场,-20V,-0.8A,0.39Ω
SSM3J15FS,TOSHIBA,SOT-416,SMD/MOS,P场,-30V,-0.1A,12Ω
SSM6J21TU,TOSHIBA,SOT-323-6,SMD/MOS,P场,-12V,-3A,0.05Ω
SSM6J401TU,TOSHIBA,SOT-323-6,SMD/MOS,P场,-30V,-2.5A,0.073Ω
SSM6J402TU,TOSHIBA,SOT-323-6,SMD/MOS,P场,-30V,-2A,0.117Ω
SSM6J51TU,TOSHIBA,SOT-323-6,SMD/MOS,P场,-12V,-4A,0.054Ω
SSM6J501NU,TOSHIBA,UDFN6B,SMD/MOS,P场,-20V,-10A,0.0153Ω
SSM6J503NU,TOSHIBA,UDFN6B,SMD/MOS,P场,-20V,-6A,0.0324Ω
SSM6J505NU,TOSHIBA,UDFN6B,SMD/MOS,P场,-12V,-12A,0.012Ω

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