场效应管 KHB4D5N60P 4D5N60P KHB4D5N60

KHB4D5N60P，TO-220，KEC，DIP/MOS，N，600V，4.5A，2.5Ω

General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switching mode
power supplies.

FEATURES
VDSS(Min.)= 600V,  ID= 4.5A
Drain-Source ON Resistance : RDS(ON)=2.5 @VGS=10V
Qg(typ.) =17nC