场效应管 WFF4N60 WFF7N60C WFF7N60

WFF4N60,MOS,600V,4A,2.5Ω

WFF7N60C,MOS,600V,7A,1.2Ω,220F

Features
■  RDS(on) (Max 1.2  ? )@VGS=10V
■  Gate Charge (Typical 28nC)
■  Improved dv/dt Capability, High Ruggedness
■  100% Avalanche Tested
■  Maximum Junction Temperature Range  (150°C)

General Description
This  Power MOSFET  is  produc ed  using  Wisdom’s  advanced
planar stripe, DMOS technology. This latest technology has been
especially designed  to  minimize  on-state resistance, have a high
rugged avalanche characteristics.   These devices are well suited  
for high efficiency switch mode power  supplies, active power factor
correction, electronic lamp ballas ts based on half bridge topology.

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