IRLS3036TRLPBF MOSFET ▊进口原装现货▊

Symbol

Parameter

Max.

Units

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

270(})  

A

I_D @ T_C = 100°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

190(})  

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Package Limited)

195

IDM

Pulsed Drain Current <I)  

1100

P_D @T_C = 25°C

Maximum Power Dissipation

380

W

Linear Derating Factor

2.5

W/°C

VGS

Gate-to-Source Voltage

±16

V

dv/dt

Peak Diode Recovery ©

8.0

V/ns

T_J

TSTG

Operating Junction and

Storage Temperature Range

-55  to + 175

°C

Soldering Temperature, for 10 seconds

(1.6mm from case)

300