IRFR540ZTRPBF MOSFET ▊进口原装现货▊

最大绝对额定值

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

35

A

ID @ TC = 100°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

25

IDM

Pulsed Drain Current CD

140

PD @TC = 25°C

Power Dissipation

91

W

Linear Derating Factor

0.61

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS (Thermally limited)

Single Pulse Avalanche Energy@

39

mJ

E_AS (Tested )

Single Pulse Avalanche Energy Tested Value ®

75

IAR

Avalanche Current CD

See Fig.12a, 12b, 15, 16

A

EAR

Repetitive Avalanche Energy Ci)  

mJ

TJ

TSTG

Operating Junction and

Storage Temperature Range

-55 to + 175

°C

Reflow Soldering Temperature, for 10 seconds

300

Mounting Torque, 6-32 or M3 screw

10 lbf•in (1.1N•m)