现货* *MOS N沟道 UT4410

D*CRIPTION
As advanced N-channel logic level enhancement MOSFET,
the UT4410 is produced using UTC’s high cell density, DMOS
trench technology. which has been specially tailored to minimize
the on-resistance and maintain low gate charge for *ior
switching performance.
These devices can be particularly suited for such low voltage
applications: cellular phone and notebook computer power
management and other battery powered circuits where high-side
switching and low in-line power loss are needed in a very *all
outline surface mount package.
FEATUR*
* RDS(ON) < 18mΩ @VGS = 4.5V
* RDS(ON) < 12mΩ @VGS = 10 V
* Ultra low gate charge ( t*ical 11 nC )
* Low reverse transfer capacitance ( CRSS = t*ical 35 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness