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D*CRIPTION
The NCE0203S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATUR*
● V =200V,I =3.9A
RDS(ON) < 79m? @ VGS=10V (T*:56m?)
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Low Gate to Drain Charge to Reduce Switching Losses
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
"NCE(新洁能)
NCE0203S
*缘栅(MOSFET)
N沟道
增强型
SW-REG/开关电源
SMD(SO)/表面封装
N-FET硅N沟道