供应S9015 M6 DOT-23

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  SOT-23 Plastic-Encapsulate Transistors    

 

 

 


 

S9015 TRANSISTOR (PNP)

 

 

FEATUR* 

z      Complementary to S9014

 

 

MARKING: M6

 

MAXIMUM RATINGS (TA=25 unless otherwise noted)


SOT-23

 

 

 

 

 

 

1. BASE

2. EMITTER

3. COLLE*OR


 

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-45

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-0.1

A

PC

Collector Power Dissipation

0.2

W

Tj

Junction Temperature

150

Tstg

Storage Temperature

-55-150

 

ELE*RICAL CHARA*ERISTICS (Tamb=25 unless otherwise specified)

 

 

Parameter

 

Symbol

 

Test      conditions

 

MIN

 

TYP

 

MAX

 

UNIT

 

Collector-base breakdown voltage

 

V(BR)CBO

 

IC= -100μA, IE=0

 

-50

 

 

 

V

 

Collector-emitter breakdown voltage

 

V(BR)CEO

 

IC= -0.1mA, IB=0

 

-45

 

 

 

V

 

Emitter-base breakdown voltage

 

V(BR)EBO

 

IE=-100μA, IC=0

 

-5

 

 

 

V

 

Collector cut-off current

 

ICBO

 

VCB=-50 V, IE=0

 

 

 

-0.1

 

μA

 

Emitter cut-off current

 

IEBO

 

VEB= -5V, IC=0

 

 

 

-0.1

 

μA

 

DC current gain

 

hFE

 

VCE=-5V, IC= -1mA

 

200

 

 

1000

 

 

Collector-emitter saturation voltage

 

VCE(sat)

 

IC=-100mA, IB= -10mA

 

 

 

-0.3

 

V

 

Base-emitter saturation voltage

 

VBE(sat)

 

IC=-100mA, IB=-10mA

 

 

 

-1

 

V

 

Transition frequency

 

fT

 

VCE=-5V,   IC= -10mA

f=30MHz

 

150

 

 

 

MHz

CLASSIFICATION OF    hFE

 

Rank

L

H

Range

200-450

450-1000


 

 

 

 

 

 

Typical Characteristics                                                          S9015

 

 

功率特性

小功率

结构

点接触型

材料

硅(Si)

频率特性

变频

应用范围

放大

营销方式

代理

*性

NPN型

封装形式

贴片型

型号/规格

S9015 M6 DOT-23

品牌/商标

长电

封装材料

塑料封装