贴片三*管J3，9013，SOT-23

SOT-23 Plastic-Encapsulate Transistors

S9013 TRANSISTOR (NPN)

FEATUR*

z Complementary to S9012

z Excellent hFElinearity

MARKING: J3

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

SOT-23

1. BASE

2. EMITTER

3. COLLE*OR

Symbol	Parameter	Value	Units
VCBO	Collector-Base Voltage	40	V
VCEO	Collector-Emitter Voltage	25	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current -Continuous	500	mA
PC	Collector Power Dissipation	300	mW
Tj	Junction Temperature	150	℃
Tstg	Storage Temperature	-55-150	℃

ELE*RICAL CHARA*ERISTICS (Tamb=25℃ unless otherwise specified)

Parameter	Symbol	Test conditions	MIN	TYP	MAX	UNIT
Collector-base breakdown voltage	V(BR)CBO	IC= 100μA,IE=0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 0.1mA,IB=0	25			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100μA, IC=0	5			V
Collector cut-off current	ICBO	VCB=40V, IE=0			0.1	μA
Collector cut-off current	ICEO	VCE=20V, IB=0			0.1	μA
Emitter cut-off current	IEBO	VEB= 5V, IC=0			0.1	μA
DC current gain	hFE(1)	VCE=1V, IC= 50mA	120		400
DC current gain	hFE(2)	VCE=1V, IC=500mA	40
Collector-emitter saturation voltage	VCE(sat)	IC=500mA, IB= 50mA			0.6	V
Base-emitter saturation voltage	VBE(sat)	IC=500mA, IB= 50mA			1.2	V
Transition frequency	fT	VCE=6V, IC= 20mA f=30MHz	150			MHz

CLASSIFICATION OF hFE(1)

Rank	L	H	J
Range	120-200	200-350	300-400

Typical Characteristics S9013

*性

NPN型

封装形式

贴片型

型号/规格

9013 J3

结构

点接触型

品牌/商标

长电

材料

硅(Si)

封装材料

塑料封装

应用范围

放大

供应贴片三*管J3，9013，SOT-23