供应S9014 J6 SOT-23

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  SOT-23 Plastic-Encapsulate Transistors    

 

 

 

 


 

S9014    TRANSISTOR (NPN)

 

 

FEATUR*

z      Complementary to S9015

 

 

MARKING: J6

 

MAXIMUM RATINGS (TA=25unless otherwise noted)


SOT-23

1. BASE            

2. EMITTER

3. COLLE*OR


 

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

50

V

VCEO

Collector-Emitter Voltage

45

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

0.1

A

PC

Collector Power Dissipation

0.2

W

Tj

Junction Temperature

150

Tstg

Storage Temperature

-55-150

ELE*RICAL CHARA*ERISTICS (Tamb=25 unless otherwise specified)

 

 

Parameter

 

Symbol

 

Test      conditions

 

MIN

 

TYP

 

MAX

 

UNIT

 

Collector-base breakdown voltage

 

V(BR)CBO

 

IC= 100μA,   IE=0

 

50

 

 

 

V

 

Collector-emitter breakdown voltage

 

V(BR)CEO

 

IC= 0.1mA, IB=0

 

45

 

 

 

V

 

Emitter-base breakdown voltage

 

V(BR)EBO

 

IE=100μA, IC=0

 

5

 

 

 

V

 

Collector cut-off current

 

ICBO

 

VCB=50 V ,   IE=0

 

 

 

0.1

μA

 

Collector cut-off current

 

ICEO

 

VCE=35V ,   IB=0

 

 

 

0.1

μA

 

Emitter cut-off current

 

IEBO

 

VEB= 3V ,       IC=0

 

 

 

0.1

μA

 

DC current gain

 

hFE

 

VCE=5V,   IC= 1mA

 

200

 

 

1000

 

 

Collector-emitter saturation voltage

 

VCE(sat)

 

IC=100 mA, IB= 5mA

 

 

 

0.3

 

V

 

Base-emitter saturation voltage

 

VBE(sat)

 

IC=100 mA, IB= 5mA

 

 

 

1

 

V

 

Transition frequency

 

fT

 

VCE=5V,   IC= 10mA

f=30MHz

 

150

 

 

 

MHz

 

CLASSIFICATION OF    hFE

 

Rank

L

H

Range

200-450

450-1000


 

 

 

 

 

 

Typical Characteristics                                                            S9014

 

 

"
*性

NPN型

封装形式

贴片型

型号/规格

S9014 J6 SOT-23

结构

点接触型

品牌/商标

长电

材料

硅(Si)

封装材料

塑料封装

应用范围

放大