NP4836双NMOS管,TDM3478单NMOS低内阻

地区:广东 深圳
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深圳市百盛新纪元半导体有限公司

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NP4836   TDM3478,FP6606C,FP6606AC,FP6601Q,FP6601AA

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Description

The NP4836 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for high side switch in .


General Features

 VDS =30V,ID =8A

     RDS(ON)=15.5mΩ (typical) @ VGS=10V

     RDS(ON)=19.2mΩ (typical) @ VGS=4.5V

 Excellent gate charge x RDS(ON) product(FOM)

 Very low on-resistance RDS(ON)

 150 °C operating temperature

 Pb-free lead plating

 100% UIS tested


    SMPS and general purpose applications

    SOP8封装形式。

    NP4836搭配FP6601AA,双口快充电路芯片。

    深圳市百盛新纪元半导体,代理FP6601AA,  NP4836  MOS

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DESCRIPTION

The TDM3478 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This

device is suitable for use as a load switch or in PWM applications.


GENERAL FEATURES

 RDS(ON) < 9.7mΩ @ VGS=4.5V

    RDS(ON) < 6mΩ @ VGS=10V

 High Power and current handling capability

 ESD Protection

 Surface Mount Package

 Lead Free and Green Devices available(RoHS Compliant)




型号/规格

NP4836/TDM3478

品牌/商标

MOS

封装形式

SOP8/DFN

环保类别

无铅环保型

安装方式

贴片式

包装方式

卷带编带包装

功率特征

大功率