SuperjunctionMOSFET英国进口
北京特博万德科技有限公司独家出售英国ICEMOSTECH的高品质SOI wafer和
SuperJunction MOSFET。
SOI wafer尺寸: 4”(100mm）, 5”（125mm）,
6”（150mm） and 8"（200mm）
SOI Spec. 规格：
1- Bonded SOI wafer
(绝缘硅上键合硅片）
For 4”(100mm）, 5”（125mm）, 6”（150mm）
---- Handle
wafer minimum 300um maximum 1000um,
---- Buried Oxide, minimum 0.1 um,
maximum 4 um,
---- Device layer minimum 2 um, max 500 um.
For 8"（200mm）
---- Handle thickness minimum 500um and maximum
675um,
---- Buried Oxide minimum 0.1 um, maximum 4 um,
----
Device layer minimum 5 um, maximum 500 um.
2- Si-Si direct
wafer bonding (replacement for epi) 硅-硅直接键合，可替代外延片
100mm,
125mm, 150mm and 200mm, thickness as specified above.
3-
Engineered SOI, Double SOI (DSOI), Trench Isolation SOI (dielectric isolation),
Cavity SOI (for pressure sensor, gyro and accelerometer sensor,
microfludic etc.)
and finally Through Silicon Via (TSV)
---- Cavity SOI - Bonded SOI or Silicon silicon DWB wafers with
cavities performed within the wafer
---- Multiple SOI 2 or 3 or more
layers of SOI designed around your process
---- Structured wafers
silicon wafers or SOI with buried electrode layers, vias, interconnect already
incorporated
4- SOI + Trench & Refill
Features
• Significant die shrink compared to conventional dielectric isolation
(DI) or junction isolation
• Bulk quality top silicon layer
• Total device-to-device isolation
• Lower substrate capacitance
than bulk
• Fully flexible specification on SOI, Trench and refill
parameters
5- Superjunction MOSFET
为了一些客户的紧急需求，英国工厂存有部分现货！
欢迎您来电咨询更详细的产品信息！
