供应进口MOS芯片36N06

Die size :1.85×1.85(mm× mm)

Wafer thickness :185(μm)

Positive electrode metal :Al 

Back electrode metal :Ag

Max Drain-Source Voltage(VDSS) :60V

Continuous Drain Current Tc=25℃(ID) :25A

Power Dissipation Ta=25℃(Ptot) :50W

Junction Temperature(Tj) :175℃