供应进口MOS芯片18N06

Die size :1.91×3.56(mm× mm)

Wafer thickness :190(μm)

Positive electrode metal :Al 

Back electrode metal :Ag

Max Drain-Source Voltage(VDSS) :60V

Continuous Drain Current Tc=25℃(ID) :55A

Power Dissipation Ta=25℃(Ptot) :130W

Junction Temperature(Tj) :175℃