TIP142 达林顿晶体管 ST

TIP142

达林顿晶体管 NPN Power Darlington Complementary transistors

Features

■ Monolithic Darlington configuration

■ Integrated antiparallel collector-emitter diode

Applications

■ Linear and switching industrial equipment

Description TIP142

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

型号: TIP142 

制造商: STMicroelectronics 

产品种类: 达林顿晶体管 

RoHS:  无铅环保  

配置: Single 

晶体管极性: NPN 

集电极—发射极最大电压 VCEO: 100 V 

发射极 - 基极电压 VEBO: 5 V 

集电极—基极电压 VCBO: 100 V 

最大直流电集电极电流: 10 A 

最大集电极截止电流: 1000 uA 

安装风格: Through Hole 

封装 / 箱体: TO-247 

最大工作温度: + 150 C 

系列: TIP142 

高度: 20.15 mm  

长度: 15.75 mm  

宽度: 5.15 mm  

商标: STMicroelectronics  

直流集电极/Base Gain hfe Min: 500  

产品类型: Darlington Transistors  

工厂包装数量: 600  

子类别: Transistors  

单位重量: 6.500 g 

Absolute maximum ratings

Symbol Parameter Value Unit

VCBO Collector-base voltage (IE = 0) 100 V

VCEO Collector-emitter voltage (IB = 0) 100 V

VEBO Emitter-base voltage (IC = 0) 5 V

IC Collector current 10 A

ICM Collector peak current 20 A

IB Base current 0.5 A

PTOT Total dissipation at Tcase = 25 °C 125 W

TSTG Storage temperature -65 to 150 °C

TJ Max. operating junction temperature 150 °C