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TIP147
达林顿晶体管 PNP Complementary power Darlington transistors
Description TIP147
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Features
■ Monolithic Darlington configuration
■ Integrated antiparallel collector-emitter diode
Applications
■ Linear and switching industrial equipment
Absolute maximum ratings
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 100 V
VCEO Collector-emitter voltage (IB = 0) 100 V
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 10 A
ICM Collector peak current 20 A
IB Base current 0.5 A
PTOT Total dissipation at Tcase = 25 °C 125 W
TSTG Storage temperature -65 to 150 °C
TJ Max. operating junction temperature 150 °C
型号: TIP147
制造商: STMicroelectronics
产品种类: 达林顿晶体管
RoHS: 无铅环保
配置: Single
晶体管极性: PNP
集电极—发射极最大电压 VCEO: 100 V
发射极 - 基极电压 VEBO: 5 V
集电极—基极电压 VCBO: 100 V
最大直流电集电极电流: 10 A
最大集电极截止电流: 1000 uA
安装风格: Through Hole
封装 / 箱体: TO-247
最大工作温度: + 150 C
系列: TIP147
高度: 20.15 mm
长度: 15.75 mm
宽度: 5.15 mm
商标: STMicroelectronics
直流集电极/Base Gain hfe Min: 500
产品类型: Darlington Transistors
工厂包装数量: 600
子类别: Transistors
单位重量: 6.500 g
TIP147
ST(意法半导体)
无铅环保型
: 10 A
: 1000 uA
: 100 V
: 100 V