供应SI7115DN-T1-GE3原装VISHAY(威世)

产品型号：SI7115DN-T1-GE3

• 品牌： VISHAY(威世)
• 封装： PowerPAK1212-8
• 描述：类型：P沟道 漏源电压(Vdss)：150V 连续漏极电流(Id)：8.9A 功率(Pd)：3.7W 导通电阻(RDS(on)@Vgs,Id)：295mΩ@10V,4A 阈值电压(Vgs(th)@Id)：4V@250uA P沟道,-150V,-8.9A,0.295Ω@-10V

These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
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