IRFB4020PB原装Infineon(英飞凌)

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产品型号：IRFB4020PBF
IRFB4020PBF IRFB4020PBF IRFB4020PBF

品牌： Infineon(英飞凌)
封装： TO-220(TO-220-3)
描述：类型：N沟道漏源电压(Vdss)：200V 连续

These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.漏极电流(Id)：18A 功率(Pd)：100W 导通电阻(RDS(on)@Vgs,Id)：100mΩ@10V,11A 阈值电压(Vgs(th)@Id)：4.9V@100uA N沟道,200V,18A,80mΩ@10V

型号/规格

IRFB4020PBF

品牌/商标

INFINEON（英飞凌）

封装形式

TO-220(TO-220-3)

环保类别

普通型

安装方式

直插式

包装方式

盒带编带包装

功率特征

大功率

供应IRFB4020PB原装Infineon(英飞凌)