描述：类型：N沟道 漏源电压(Vdss)：600V 连续漏极电流(Id)：48A 功率(Pd)：164W 导通电阻(RDS(on)@Vgs,Id)：60mΩ@10V,15.9A 阈值电压(Vgs
品 牌： Infineon(英飞凌)
厂家型号： IPW60R060P7
商品编号： C454258
封装： TO-247-3
商品毛重： 7.875克(g)
包装方式： 管装
(th)@Id)：4V@800uA
Fifth Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
IPW60R060P7 IPW60R060P7
产品型号：IPW60R060P7
