动态随机存储器 NT5CB128M16JR-FL

地区:广东 深圳
认证:

深圳市迅丰达电子科技有限公司

金牌会员3年

全部产品 进入商铺

动态随机存储器 NT5CB128M16JR-FL 的描述:

The 2Gb Double-Data-Rate-3 (DDR3(L)) is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAMs.

The 2Gb chip is organized as 32Mbit x 8 I/Os x 8 banks or 16Mbit x 16 I/Os x 8 bank devices.

 

These synchronous devices achieve high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin for general applications.The chip is designed to comply with all key DDR3(L) DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling).

 

 All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion.These devices operate with a single 1.5V ± 0.075V or 1.35V -0.067V/+0.1V power supply and are available in BGA packages.

 

动态随机存储器 NT5CB128M16JR-FL 的参数:

制造商

NANYA

框架

128Mx16

DRAN 类型

DRAM DDR3

存储器类型

2Gbit

工作电压

1.5V

针脚数

96-Pin

封装

TFBGA

RoHS

 

动态随机存储器 NT5CB128M16JR-FL 的特征:

JEDEC DDR3 Compliant

- 8n Prefetch Architecture

- Differential Clock(CK/CK) and Data Strobe(DQS/DQS)

- Double-data rate on DQs, DQS and DMl

 

Data Integrity

- Auto Self Refresh (ASR) by DRAM built-in TS

- Auto Refresh and Self Refresh Modesl

 

Power Saving Mode

- Power Down Mode

 

Signal Integrity

- Configurable DS for system compatibility

- Configurable On-Die Termination

- ZQ Calibration for DS/ODT impedance accuracy viaexternal ZQ pad (240 ohm ± 1%)l

 

Signal Synchronization

- Write Leveling via MR settings 5

- Read Leveling via MPR

 

Interface and Power Supply

- SSTL_15 for DDR3:VDD/VDDQ=1.5V(±0.075V)

- SSTL_1353for DDR3L:VDD/VDDQ=1.35V(-0.067/+0.1V)

 

全新原包原装可含税(香港可交)

MT29F64G08CBABBWPR:B

KLMBG2JETD-B041

KLMAG1JETD-B041

KLM8G1GETF-B041

KLM4G1FETE-B041

K4E8E324EB-EGCF

K4E6E304EB-EGCF

K4E6E304EC-EGCG

K4B4G1646E-BCNB

K4A8G165WB-BCRC

NT5CC64M16GP-DII

NT5CC64M16GP-DI

NT5CC256M16ER-EKI

NT5CC256M16ER-EK

NT5CC256M16EP-EK

NT5CC128M16JR-EK

NT5AD512M16C4-HR

NT5AD512M16A4-HR

NT5AD256M16D4-HR

KMGX6001BA-B514

KMGP6001BA-B514

型号

NT5CB128M16JR-FL

制造商

NANYA/南亚

封装

FBGA

批次

23+

无铅/环保

无铅/环保