供应W9864G6KH-6 原装 SDRAM

W9864G6KH-6 原装 SDRAM 的描述：

W9864G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words ′ 4 banks ′ 16 bits. W9864G6KH delivers a data bandwidth of up to 200M words per second.

 For different application, W9864G6KH is sorted into the following speed grades: -5, -6, -6I and -7. The -5 grade parts can run up to 200MHz/CL3. The -6 and -6I grade parts can run up to 166MHz/CL3 (the -6I industrial grade which is guaranteed to support -40°C ~ 85°C).

The -7 grade parts can run up to 143MHz/CL3 and with tRP = 18nS. Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command.

Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.

By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9864G6KH is ideal for main memory in high performance applications.

W9864G6KH-6 原装 SDRAM 的技术参数：

MT29F64G08CBABAWP固带 10K 23+

KLM8G1GETF-B041 10K 23+

KLMBG2JETD-B041 10K 23+

KLMAG1JETD-B041 10K 23+

K4E6E304EC-EGCG 10K 23+

K4B4G1646E-BCNB 10K 23+

K4F6E3S4HM-MGCJ 10K 23+

K4AAG165WA-BCWE 10K 23+

K4B4G0846E-BCNB 10K 23+

H5TC4G83BFR-PBA 95 17+

H26M41204HPR 5 20+

SDTNRGAMA-008G 35 21+

K4UBE3D4AA-MGCL 10K 23+

K4UBE3D4AB-MGCL 10K 23+

K4U6E3S4AA-MGCR 10K 23+

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