供应H5AN4G6NBJR-UHI 原装 DDR4

地区:广东 深圳
认证:

深圳市迅丰达电子科技有限公司

金牌会员3年

全部产品 进入商铺

H5AN4G6NBJR-UHI 原装 DDR4

4Gb DDR4 SDRAM  Lead-Free&Halogen-Free(RoHS Compliant)

 

H5AN4G6NBJR-UHI 原装 DDR4 的描述:

The H5AN4G6NBJR-xxI  are a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

 

H5AN4G6NBJR-UHI 原装 DDR4 的技术参数:

制造商

SK HYNIX

容量

4GB

RoHS

工作电压

1.2V

工作温度

-40°C~+95°C

速率

1200Mbps

封装 / 箱体

FBGA 96 BALL

架构

256MX16

 

 热门现货

MT29F64G08CBABBWPR:B

KLMBG2JETD-B041

KLMAG1JETD-B041

KLM8G1GETF-B041

KLM4G1FETE-B041

K4E8E324EB-EGCF

K4E6E304EB-EGCF

K4E6E304EC-EGCG

K4B4G1646E-BCNB

K4A8G165WB-BCRC


型号

H5AN4G6NBJR-UHI

制造商

SK Hynix /海力士

封装

FBGA

批次

21+/22+

无铅/环保

无铅/环保