图文详情
产品属性
相关推荐
H5AN4G6NBJR-UHI 原装 DDR4
4Gb DDR4 SDRAM Lead-Free&Halogen-Free(RoHS Compliant)
H5AN4G6NBJR-UHI 原装 DDR4 的描述:
The H5AN4G6NBJR-xxI are a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
H5AN4G6NBJR-UHI 原装 DDR4 的技术参数:
制造商 | SK HYNIX |
容量 | 4GB |
RoHS | 是 |
工作电压 | 1.2V |
工作温度 | -40°C~+95°C |
速率 | 1200Mbps |
封装 / 箱体 | FBGA 96 BALL |
架构 | 256MX16 |
热门现货
MT29F64G08CBABBWPR:B
KLMBG2JETD-B041
KLMAG1JETD-B041
KLM8G1GETF-B041
KLM4G1FETE-B041
K4E8E324EB-EGCF
K4E6E304EB-EGCF
K4E6E304EC-EGCG
K4B4G1646E-BCNB
K4A8G165WB-BCRC
H5AN4G6NBJR-UHI
SK Hynix /海力士
FBGA
21+/22+
无铅/环保