K4B4G0446D-BCK0 原装 DDR3

The 4Gb DDR3 SDRAM D-die is organized as a 128Mbit x 4 I/Os x 8banks or 64Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3- 2133) for general applications

制造商	SAMSUNG
速度	1866 Mbps
电源电压	1.35 V
温度规格	0 ~ 85 °C
产品类型	DDR3 SDRAM
容量	4 GB
架构	1G x 4
封装	FBGA-78

KMGX6001BA-B514

KMGP6001BA-B514

KMFN60012M-B214

KMDX60018M-B425

KLMDG8JENB-B041

KLMCG4JETD-B041

KLMBG2JETD-B041

KLMAG1JETD-B041

KLM8G1GETF-B041

KLM4G1FETE-B041

K9F1G08U0E-SIB0

K4Z80325BC-HC14

K4G80325FC-HC25

K4E8E324ED-EGCG

K4E8E324EB-EGCF

K4E6E304EB-EGCF

K4E6E304ED-EGCG

K4E6E304EC-EGCG

K4E6E304EC-EGCF

K4B4G1646E-BYMA

K4B4G1646E-BYK0

K4B4G1646E-BCNB

K4E8E324EB-AGCF

K4B4G0846E-BYMA

K4AAG165WA-BCWE

K4AAG165WA-BCTD

K4A8G165WC-BCTD

K4A8G165WC-BCRC

K4A8G165WB-BCRC

K4A4G165WF-BCTD

K4A4G165WE-BCRC

KLMBG2JETD-B041

KLMAG1JETD-B041

KLM8G1GETF-B041

KLM4G1FETE-B041

K4E8E324EB-EGCF

K4E6E304EB-EGCF

K4E6E304EC-EGCG

K4B4G1646E-BCNB

K4A8G165WB-BCRC

型号

K4B4G0446D-BCK0

制造商

SAMSUNG/三星

封装

FBGA

批次

21+/22+

无铅/环保

供应K4B4G0446D-BCK0 原装 DDR3