供应K9F2G08U0C-SCBO 原装 NAND FLASH

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K9F2G08U0C-SCBO 原装 NAND FLASH

2Gb C-die NAND Flash     Single-Level-Cell (1bit/cell)

 

K9F2G08U0C-SCBO 原装 NAND FLASH 的描述

Offered in 256Mx8bit, the K9F2G08U0C is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 250μs on the (2K+64)Byte page and an erase operation can be performed in typical 2ms on a (128K+4K)Byte block.

 

Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.

 

Even the write-intensive systems can take advantage of the K9F2G08U0C′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08U0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

 

K9F2G08U0C-SCBO 原装 NAND FLASH 的技术参数:

商品目录

NOR FLASH

存储器构架(格式)

FLASH

存储器接口类型

Parallel

存储器容量

2Gb (256M x 8)

工作电压

2.7V ~ 3.6V

存储器类型

Non-Volatile

速度

1 MHZ

标准包装数量

960

 

 

型号

K9F2G08U0C-SCBO

制造商

SAMSUNG/三星

封装

TSOP

批次

22+

无铅/环保

无铅/环保