供应K9WBG08U1M 原装 NAND FLASH

供应K9WBG08U1M 原装  NAND FLASH

 

K9WBG08U1M 原装  NAND FLASH 的技术参数：

商品目录	NOR FLASH
存储器构架(格式)	FLASH
架构	x8
工作电压	2.7V ~ 3.6V

 

 

供应K9WBG08U1M 原装  NAND FLASH 的特征

• Voltage Supply

- 3.3V Device(K9XXG08UXM) : 2.7V ~ 3.6V

• Organization

- Memory Cell Array : (2G + 64M) x 8bit

- Data Register : (4K + 128) x 8bit

• Automatic Program and Erase

- Page Program : (4K + 128)Byte

- Block Erase : (256K + 8K)Byte

• Page Read Operation

- Page Size : (4K + 128)Byte

- Random Read : 25μs(Max.)

- Serial Access : 25ns(Min.)

* K9NCG08U5M : 50ns(Min.)

• Fast Write Cycle Time

- Page Program time : 200μs(Typ.)

- Block Erase Time : 1.5ms(Typ.)

2G x 8 Bit / 4G x 8 Bit / 8G x 8 Bit NAND Flash Memory

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte

ECC)

- Data Retention : 10 Years

• Command Driven Operation

• Intelligent Copy-Back with internal 1bit/528Byte EDC

• Unique ID for Copyright Protection

• Package :

- K9KAG08U0M-PCB0/PIB0 : Pb-FREE PACKAGE

48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)

- K9WBG08U1M-PCB0/PIB0 : Pb-FREE PACKAGE

48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)

- K9WBG08U1M-ICB0/IIB0

52 - Pin TLGA (12 x 17 / 1.0 mm pitch)

- K9MCG08U5M-PCB0/PIB0 : Pb-FREE PACKAGE

48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)

 

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