供应K4B4G1646D-BIK0 原装 DDR3

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K4B4G1646D-BIK0 原装 DDR3

K4B4G1646D-BIK0

4Gb D-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant)

 

 

K4B4G1646D-BIK0 原装 DDR3   的技术参数:

脚位/封装

FBGA-96

外包装

TRAY

无铅/环保

无铅/环保

电压()

1.5 V

温度规格

0°C  to +  85°C

速度

1600 Mbps

Number Of Words

256M

Bit Organization

X16

Density

4G

Rohs

 

 

K4B4G1646D-BIK0 原装 DDR3  的描述

The DDR3 SDRAM is a high-speed CMOS, dynamic random-access memory internally configured as a eight-bank DRAM. The DDR3 SDRAM uses a 8n prefetch architecture to achieve high-speed operation. The 8n prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR3 SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins.

 

 

 Read and write operation to the DDR3 SDRAM are burst oriented, start at a selected location, and continue for a burst length of four or eight in a programmed sequence. Operation begins with the registration of an Active command, which is then followed by a Read or Write command. The address bits registered coincident with the Active command are used to select the bank and row to be accessed (BA0-BA2 select the bank; A0-A15 select the row).

 

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TC58NVG1S3HTA00 10000 BGA 22+ KOXIA/铠侠

TC58NVG0S3HTA00 10000 BGA 22+ KOXIA/铠侠

TC58NVG0S3ETAI0 10000 BGA 22+ KOXIA/铠侠

TC58BVG1S3HTA00 10000 BGA 22+ KOXIA/铠侠

TC58BVG0S3HTA00 10000 BGA 22+ KOXIA/铠侠

NT5CC64M16GP-DII 10000 BGA 22+ NANYA/南亚

NT5CC128M16JR-EK 10000 BGA 22+ NANYA/南亚

NT5AD512M16C4-HR 10000 BGA 22+ NANYA/南亚

NT5AD512M16A4-HR 10000 BGA 22+ NANYA/南亚

NT5AD256M16D4-HR 10000 BGA 22+ NANYA/南亚

KMGX6001BA-B514 10000 BGA 22+ SAMSUNG/三星

KMGP6001BA-B514 10000 BGA 22+ SAMSUNG/三星

K4A8G165WC-BCTD 10000 BGA 22+ SAMSUNG/三星

K4A8G165WC-BCRC 10000 BGA 22+ SAMSUNG/三星

K4A8G165WB-BCRC 10000 BGA 22+ SAMSUNG/三星

K4A4G165WF-BCTD 10000 BGA 22+ SAMSUNG/三星

K4A4G165WE-BCRC 10000 BGA 22+ SAMSUNG/三星

H9HCNNNCPUMLHR-NME 10000 BGA 22+ SK HYNIX/海力士

H5AN8G6NCJR-VKC 10000 BGA 22+ SK HYNIX/海力士

H5AN4G6NBJR-VKC 10000 BGA 22+ SK HYNIX/海力士

H5AN4G6NBJR-UHC 10000 BGA 22+ SK HYNIX/海力士

H26M41208HPR 10000 BGA 22+ SK HYNIX/海力士

H26M41204HPR 10000 BGA 22+ SK HYNIX/海力士

MTFC8GAKAJCN-4MIT 10000 TSOP 22+ MICRON/镁光

MTFC4GACAJCN-4MIT 10000 TSOP 22+ MICRON/镁光

MTFC4GACAJCN-1MWT 10000 TSOP 22+ MICRON/镁光

MT53E256M32D2DS-053WT:B 10000 TSOP 22+ MICRON/镁光

MT53D512M64D4HR-053WT:D 10000 TSOP 22+ MICRON/镁光

 

型号

K4B4G1646D-BIK0

制造商

SAMSUNG/三星

封装

FBGA

批次

22+

无铅/环保

无铅/环保