MT41K64M16TW-107 IT:J 原装 LPDDR3

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MT41K64M16TW-107 IT:J 原装 LPDDR3

 

动态随机存取存储器 DDR3 1G 64MX16 FBGA

SDRAM - DDR3L 存储器 IC 1Gb64M x 16) 并联 933 MHz 20 ns 96-FBGA8x14

MT41K64M16TW-107 IT:J 原装 LPDDR3 的技术参数:

制造商:

Micron Technology

产品种类:

动态随机存取存储器

RoHS:

 

类型:

SDRAM - DDR3L

安装风格:

SMD/SMT

封装 / 箱体:

FBGA-96

数据总线宽度:

16 bit

存储容量:

1 Gbit64 M x 16

max)时钟频率:

933 MHz

电源电压:

1.283 V  to 1.45 V

电源电流(max):

63 mA

工作温度:

- 40 C to + 95 C

封装:

Tray

商标:

Micron

湿度敏感性:

Yes

产品类型:

DRAM

 

 

MT41K64M16TW-107 IT:J 原装 LPDDR3 的描述:

DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins.

 

 A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clockcycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, onehalf-clock-cycle data transfers at the I/O pins.

 

 

The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the data strobes. The DDR3 SDRAM operates from a differential clock (CK and CK#). The crossing of CK going HIGH and CK# going LOW is referred to as the positive edge of CK. 



型号

MT41K64M16TW-107 IT:J

制造商

MICRON/镁光

封装

FBGA

批次

21+/22+

无铅/环保

无铅/环保