供应MT40A512M16JY-083E:B DDR4 原装

MT40A512M16JY-083E:B DDR4 原装

DDR4 SDRAM  8G 512MX16 FBGA

DDR4 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally configured as an 16-bank (4-banks per Bank Group) DRAM

MT40A512M16JY-083E:B DDR4 原装的技术参数：

MT40A512M16JY-083E:B DDR4 原装的描述：

The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as sixteen banks (4 bank groups with 4 banks for each bank group) for x4/x8 devices, and as eight banks for each bank group (2 bank groups with 4 banks each) for x16 devices.

The device uses double data rate (DDR) architecture to achieve high-speed operation. DDR4 architecture is essentially an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for a device module effectively consists of a single 8n-bit-wide, four-clockcycle-data transfer at the internal DRAM core and eight corresponding n-bit-wide, onehalf-clock-cycle data transfers at the I/O pins.

Read and write accesses to the device are burst-oriented. Accesses start at a selected location and continue for a burst length of eight or a chopped burst of four in a programmed sequence.

Operation begins with the registration of an ACTIVE command, which is then followed by a READ or WRITE command.