供应W29N01HVSINA NAND FLASH 原装

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W29N01HVSINA NAND FLASH 原装

IC FLASH 1GBIT PARALLEL 48TSOP

FLASH - NAND(SLC) 存储器 IC 1Gb(128M x 8) 并联 25 ns 48-TSOP

1G-BIT 3.3V NAND FLASH MEMORY

 

W29N01HVSINA NAND FLASH 原装的描述:

The W29N01HV (1G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as, voice, video, text and photos.

 The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA 10uA for CMOS standby current.

The memory array totals 138,412,032 bytes, and organized into 1,024 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each.

Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions).

 

W29N01HVSINA NAND FLASH 原装的技术参数:

类别

存储器

制造商

Winbond Electronics

RoHS 状态

符合 ROHS3 规范

湿气敏感性等级 (MSL)

3(168 小时)

REACH 状态

 REACH 产品

存储器类型

非易失

存储器格式

闪存

技术

FLASH - NAND(SLC)

存储容量

1Gb(128M x 8)

存储器接口

并联

写周期时间 - 字,页

25ns

访问时间

25 ns

电压 - 供电

2.7V ~ 3.6V

工作温度

-40°C ~ 85°C(TA)

安装类型

表面贴装型

封装/外壳

48-TFSOP(0.724",18.40mm 宽)

 

 

 


型号

W29N01HVSINA

制造商

Winbond

封装

TSOP

批次

21+/22+

无铅/环保

无铅/环保