供应H5TQ4G63CFR-TEC 原装 DDR3

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H5TQ4G63CFR-TEC 原装 DDR3

The H5TQ4G83CFR-xxC,H5TQ4G63CFR-xxC are a 4,294,967,296-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK Hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

 

H5TQ4G63CFR-TEC 原装 DDR3 的技术参数:

制造商

SK HYNIX

RoHS

工作电压

1.5V

容量

4GB

架构

256MX16

封装 / 箱体

FBGA-96

工作温度

0°C~+95°C

制造商

SK HYNIX

 


MT29F64G08CBABBWPR:B

KLMBG2JETD-B041

KLMAG1JETD-B041

KLM8G1GETF-B041

KLM4G1FETE-B041

K4E8E324EB-EGCF

K4E6E304EB-EGCF

K4E6E304EC-EGCG

K4B4G1646E-BCNB

K4A8G165WB-BCRC

型号

H5TQ4G63CFR-TEC

制造商

SK Hynix /海力士

封装

FBGA

批次

21+/22+

无铅/环保

无铅/环保