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H5TQ4G63CFR-TEC 原装 DDR3
The H5TQ4G83CFR-xxC,H5TQ4G63CFR-xxC are a 4,294,967,296-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK Hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
H5TQ4G63CFR-TEC 原装 DDR3 的技术参数:
制造商 | SK HYNIX |
RoHS | 是 |
工作电压 | 1.5V |
容量 | 4GB |
架构 | 256MX16 |
封装 / 箱体 | FBGA-96 |
工作温度 | 0°C~+95°C |
制造商 | SK HYNIX |
MT29F64G08CBABBWPR:B
KLMBG2JETD-B041
KLMAG1JETD-B041
KLM8G1GETF-B041
KLM4G1FETE-B041
K4E8E324EB-EGCF
K4E6E304EB-EGCF
K4E6E304EC-EGCG
K4B4G1646E-BCNB
K4A8G165WB-BCRC
H5TQ4G63CFR-TEC
SK Hynix /海力士
FBGA
21+/22+
无铅/环保