STF11NM80

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These N-channel Power MOSFETs are

developed using STMicroelectronics'

revolutionary MDmesh™ technology, which

associates the multiple drain process with the

company's PowerMESH™ horizontal layout.

These devices offer extremely low on-resistance,

high dv/dt and excellent avalanche

characteristics. Utilizing ST's proprietary strip

technique, these Power MOSFETs boast an

overall dynamic performance which is superior to

similar products on the market.




型号/规格

STF11NM80

品牌/商标

ST(意法半导体)

封装形式

TO220F

环保类别

无铅环保型

安装方式

直插式

包装方式

单件包装

功率特征

大功率

Low input capacitance and gate charge

Low gate input resistance

Switching applications

■ Best RDS(on)*Qg in the industr