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These N-channel Power MOSFETs are
developed using STMicroelectronics'
revolutionary MDmesh™ technology, which
associates the multiple drain process with the
company's PowerMESH™ horizontal layout.
These devices offer extremely low on-resistance,
high dv/dt and excellent avalanche
characteristics. Utilizing ST's proprietary strip
technique, these Power MOSFETs boast an
overall dynamic performance which is superior to
similar products on the market.
STF11NM80
ST(意法半导体)
TO220F
无铅环保型
直插式
单件包装
大功率
Low gate input resistance
■ Best RDS(on)*Qg in the industr