供应STP28N60M2
地区:广东 深圳
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These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and an improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Key Features:
Extremely low gate charge
Excellent output capacitance (COSS) profile
100% avalanche tested
STP28N60M2
ST(意法半导体)
TO220P
无铅环保型
直插式
单件包装
0.165 Ω
169 W