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新洁能NCE4015S 原装正品,欢迎来电咨询合作
NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =15A RDS(ON) <10mΩ @ VGS=10V (Typ. 6.1 mΩ) RDS(ON) <15mΩ @ VGS=4.5V (Typ. 11.4 mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply Schematic diagram Marking and pin Assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE4015S NCE4015S SOP-8 Ø330mm 12mm 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 15 A Drain Current-Continuous(TC=100℃) ID (100℃) 10.6 A Pulsed Drain Current IDM 70 A Maximum Power Dissipation PD 3.1 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃
NCE4015S
NCE
SOP8
无铅环保型
贴片式
卷带编带包装
40V
±20 V
15A
70A