【NXP 恩智浦】BFG520/XR ON4973 NPN 晶体管
地区：广东 深圳
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NXP 恩智浦 BFG520/XR ON4973 NPN 晶体管
NPN 9 GHz wideband transistors
特性和优势:
Gold metallization ensures excellent reliability
High power gain
High transition frequency
Low noise
应用:
Analog and di*al cellular telephones
RF frontend applications in the GHz range
Satellite TV tuners
产品参数:
| Symbol | Parameter | Conditions | Min | T*/Nom | Max | Unit |
| VCEO | collector-emitter voltage | IB=0A | 15 | V | ||
| IC | collector current | 70 | mA | |||
| Ptot | total power dissipation | Tsp≤88℃ | 300 | mW | ||
| fT | transition frequency | VCE = 6 V; IC = 20 mA; f = 1000 MHz; Tamb = 25 °C | 9 | GHz | ||
| NF | noise figure | IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C; ΓS = Γopt | 1.6 | 2.1 | dB | |
| NF | noise figure | IC = 5 mA; VCE = 6 V; f = 2000 MHz; Tamb = 25 °C; ΓS = Γopt | 1.9 | dB | ||
| PL(1dB) | output power at 1 dB gain compression | VCE = 6 V; f = 900 MHz; IC = 20 mA | 17 | dBm | ||
| GUM | peak unilateral power gain | f = 900 MHz; IC = 20 mA; VCE = 6 V; Tamb = 25 °C | 19 | dB | ||
| GUM | peak unilateral power gain | f = 2000 MHz; IC = 20 mA; VCE = 6 V; Tamb = 25 °C | 13 | dB | ||
| IP3 | third-order intercept point | IC = 20 mA; VCE = 6 V | 26 | dBm |
产品规格书:
规格书页数较多,如需整份规格书请旺旺联系!
功率
NXP/恩智浦
BFG520/XR
硅(SI),硅(SI)
贴片型
ON4973
BFG520
4973
